HM6208H Series
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high (logic 1) voltage
Input low (logic 0) voltage
Note:
V
IH
V
IL
Min
4.5
0
2.2
–0.5
*1
Typ
5.0
0
—
—
Max
5.5
0
6.0
0.8
Unit
V
V
V
V
1. V
IL
min = –2.0 V for pulse width
≤
10 ns.
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V
±
10%, V
SS
= 0 V)
HM6208H-25
Parameter
Input leakage current
Output leakage current
Operating power supply
current
Symbol Min
I
LI
I
LO
I
CC
—
—
—
HM6208H-35/45
Typ
*2
Max Unit Test Conditions
—
—
50
2.0
µA
V
CC
= Max
Vin = V
SS
to V
CC
CS
= V
IH
, V
IO
= V
SS
to V
CC
CS
= V
IL,
I
I/O
= 0 mA,
min cycle,
duty = 100%
CS
= V
IL,
I
I/O
= 0 mA,
t cycle = 50 ns,
duty = 100%
CS
= V
IH
, min cycle
CS
≥
V
CC
– 0.2 V,
0 V
≤
Vin < 0.2 V, or
Vin
≥
V
CC
– 0.2 V
Typ
*2
Max Min
—
—
60
2.0
—
10.0 —
120 —
10.0
µA
100 mA
I
CC1
—
40
80
—
40
80
mA
Standby power supply current I
SB
Standby power supply current I
SB1
(1)
I
SB1
*1
Output low voltage
Output high voltage
V
OL
V
OH
—
—
20
0.02
40
2.0
—
—
15
0.02
30
2.0
mA
—
—
2.4
0.006 0.1
*1
—
—
—
0.4
—
—
2.4
0.006 0.1
*1
—
—
0.4
—
V
V
I
OL
= 8 mA
I
OH
= –4.0 mA
Notes: 1. L-version
2. Typical values are at V
CC
= 5.0 V, Ta = +25°C and not guaranteed.
Capacitance
(Ta = 25°C, f = 1 MHz)
*1
Parameter
Input capacitance
Input/output capacitance
Note:
Symbol
Cin
C
I/O
Min
—
—
Max
6
11
Unit
pF
pF
Test Conditions
Vin = 0 V
V
I/O
= 0 V
1. These parameters are sampled and not 100% tested.
4
HITACHI [ HITACHI SEMICONDUCTOR ]
