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HM6216255HJP-12 参数 Datasheet PDF下载

HM6216255HJP-12图片预览
型号: HM6216255HJP-12
PDF下载: 下载PDF文件 查看货源
内容描述: 4M高速SRAM ( 256千字×16位) [4M high Speed SRAM (256-kword x 16-bit)]
分类和应用: 存储内存集成电路静态存储器光电二极管输出元件输入元件
文件页数/大小: 17 页 / 103 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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HM6216255H Series
AC Characteristics
(Ta = 0 to +70°C, V
CC
= 5.0 V
±
10 %, unless otherwise noted.)
Test Conditions
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
5V
Dout Zo=50
RL=50
1.5 V
Output load (A)
480Ω
Dout
255Ω
5 pF
Output load (B)
(for t
CLZ
, t
OLZ
, t
LBLZ
, t
UBLZ
, t
CHZ
, t
OHZ
,
t
LBHZ
, t
UBHZ
, t
WHZ
, and t
OW
)
Read Cycle
HM6216255H
-10
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Byte select to output valid
Output hold from address change
Chip select to output in low-Z
Output enable to output in low-Z
Byte select to output in low-Z
Chip deselect to output in high-Z
Output disable to output in high-Z
Byte deselect to output in high-Z
Symbol
t
RC
t
AA
t
ACS
t
OE
t
LB
, t
UB
t
OH
t
CLZ
t
OLZ
t
LBLZ
, t
UBLZ
t
CHZ
t
OHZ
t
LBHZ
, t
UBHZ
Min
10
3
3
0
0
Max
10
10
5
5
5
5
5
-12
Min
12
3
3
0
0
Max
12
12
6
6
6
6
6
-15
Min
15
3
3
0
0
Max
15
15
7
7
7
7
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1
1
1
1
1
1
Notes
7