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HM628512CLFP-5SL 参数 Datasheet PDF下载

HM628512CLFP-5SL图片预览
型号: HM628512CLFP-5SL
PDF下载: 下载PDF文件 查看货源
内容描述: 的4M SRAM( 512千字×8位)的 [4 M SRAM (512-kword x 8-bit)]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 17 页 / 85 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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HM628512C Series
4 M SRAM (512-kword
×
8-bit)
ADE-203-1212 (Z)
Preliminary
Rev. 0.0
Sep. 12, 2000
Description
The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes higher density,
higher performance and low power consumption by employing Hi-CMOS process technology. The device,
packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is
available for high density mounting. The HM628512C is suitable for battery backup system.
Features
Single 5 V supply
Access time: 55/70 ns (max)
Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10
µW
(typ)
Completely static memory. No clock or timing strobe required
Equal access and cycle times
Common data input and output: Three state output
Directly TTL compatible: All inputs and outputs
Battery backup operation
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.