HM62W16255H Series
Operation Table
CS
H
L
L
L
L
L
L
L
L
L
Note:
OE
×
H
L
L
L
L
×
×
×
×
WE
×
H
H
H
H
H
L
L
L
L
×:
H or L
LB
×
×
L
L
H
H
L
L
H
H
UB
×
×
L
H
L
H
L
H
L
H
Mode
Standby
Output disable
Read
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I/O1–I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9–I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
—
—
Read cycle
Read cycle
Read cycle
—
Write cycle
Write cycle
Write cycle
—
Lower byte read I
CC
Upper byte read I
CC
—
Write
I
CC
I
CC
Lower byte write I
CC
Upper byte write I
CC
—
I
CC
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
0 to +70
–55 to +125
–10 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
8 ns
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
8 ns
4
HITACHI [ HITACHI SEMICONDUCTOR ]
