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HN58C256AFP-85 参数 Datasheet PDF下载

HN58C256AFP-85图片预览
型号: HN58C256AFP-85
PDF下载: 下载PDF文件 查看货源
内容描述: 256K EEPROM ( 32千字×8位)就绪/忙和RES功能( HN58C257A ) [256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)]
分类和应用: 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 25 页 / 126 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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HN58C256A Series
HN58C257A Series
256k EEPROM (32-kword
×
8-bit)
Ready/Busy and
RES
function (HN58C257A)
ADE-203-410D (Z)
Rev. 4.0
Oct. 24, 1997
Description
The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as
32768-word
×
8-bit. They have realized high speed low power consumption and high reliability by
employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
Single 5 V supply: 5 V ±10%
Access time: 85 ns/100 ns (max)
Power dissipation
Active: 20 mW/MHz, (typ)
Standby: 110 µW (max)
On-chip latches: address, data,
CE, OE, WE
Automatic byte write: 10 ms max
Automatic page write (64 bytes): 10 ms max
Ready/Busy (only the HN58C257A series)
Data
polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 years data retention
Software data protection
Write protection by
RES
pin (only the HN58C257A series)
Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.