HN58V65A Series, HN58V66A Series
Recommended DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input voltage
V
IL
V
IH
V
H
*
4
Operating temperature
Notes: 1.
2.
3.
4.
5.
Topr
Min
2.7
0
–0.3*
1
1.9*
2
V
CC
– 0.5
0
Typ
—
0
—
—
—
—
Max
5.5
0
0.6*
5
Unit
V
V
V
V
CC
+ 0.3*
3
V
V
CC
+ 1.0
70
V
˚C
V
IL
min: –1.0 V for pulse width
≤
50 ns.
V
IH
= 2.2 V for V
CC
= 3.6 to 5.5 V.
V
IH
max: V
CC
+ 1.0 V for pulse width
≤
50 ns.
This function is supported by only the HN58V66A series.
V
IL
= 0.8 V for V
CC
= 3.6 V to 5.5 V
DC Characteristics
(Ta = 0 to + 70˚C, V
CC
= 2.7 to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V
CC
curren
Symbol
I
LI
I
LO
I
CC1
I
CC2
Operating V
CC
current
I
CC3
Min
—
—
—
—
—
—
—
—
Output low voltage
Output high voltage
Note:
V
OL
V
OH
—
Typ
—
—
1 to 2
—
—
—
—
—
—
Max
2*
1
2
5
1
6
8
12
25
0.4
—
Unit
µA
µA
µA
mA
mA
mA
mA
mA
V
V
Test conditions
Vin = 0 V to V
CC
Vout = 0 V to V
CC
CE
= V
CC
– 0.3 V to V
CC
+ 1.0 V
CE
= V
IH
Iout = 0 mA, Duty = 100%,
Cycle = 1
µs
at V
CC
= 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 1
µs
at V
CC
= 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 100 ns at V
CC
= 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 70 ns at V
CC
= 5.5 V
I
OL
= 2.1 mA
I
OH
= –400
µA
V
CC
×
0.8 —
1. I
LI
on
RES
: 100
µA
max (only the HN58V66A series)
Capacitance
(Ta = 25˚C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Note:
Symbol
Cin*
1
Cout*
1
Min
—
—
Typ
—
—
Max
6
12
Unit
pF
pF
Test conditions
Vin = 0 V
Vout = 0 V
1. This parameter is sampled and not 100% tested.
HITACHI [ HITACHI SEMICONDUCTOR ]
