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HN58X2416TI 参数 Datasheet PDF下载

HN58X2416TI图片预览
型号: HN58X2416TI
PDF下载: 下载PDF文件 查看货源
内容描述: 两线串行接口8K位EEPROM ( 1千字×8位) / 16K EEPROM ( 2千字×8位) / 32K EEPROM ( 4千字×8位) / 64K EEPROM ( 8千字X 8位) [Two-wire serial interface 8k EEPROM (1-kword x 8-bit)/16k EEPROM (2-kword x 8-bit)/32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit)]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 22 页 / 71 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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HN58X2408I/HN58X2416I
HN58X2432I/HN58X2464I
Two-wire serial interface
8k EEPROM (1-kword
×
8-bit)/16k EEPROM (2-kword
×
8-bit)
32k EEPROM (4-kword
×
8-bit)/64k EEPROM(8-kword
×
8-bit)
ADE-203-1108B (Z)
Rev. 2.0
Nov. 26, 1999
Description
HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 32-byte page programming function to make their write operation faster.
Note: Hitachi’s serial EEPROM are authorized for using consumer applications such as cellular phone,
camcorders, audio equipment. Therefore, please contact Hitachi’s sales office before using
industrial applications such as automotive systems, embedded controllers, and meters.
Features
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I
2
C
TM
serial bus*
1
)
Clock frequency: 400 kHz
Power dissipation:
Standby: 3
µA(max)
Active (Read): 1 mA(max)
Active (Write): 3 mA(max)
Automatic page write: 32-byte/page
Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
Endurance: 10
5
Cycles (Page write mode)
Data retention: 10 Years