Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No. IGBT-SP-99026(R1)
MBN400GR12
[Rated 400A/1200V, Single-pack type]
FEATURES
·
Low saturation voltage and high speed.
·
Low turn-OFF switching loss.
·
Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
·
High reliability structure.
·
Isolated heat sink (terminals to base).
OUTLINE DRAWING
Unit in mm
108
93
2-M4
E
C
62
48
CIRCUIT DIAGRAM
20
E
G
E
E
G
C
33.5
23.5
6.5
24
2-M6
20
29
4-
φ
6.5
Weight : 480g
ABSOLUTE MAXIMUM RATINGS(T
C
=25°C)
Item
Symbol
Unit
Collector-Emitter Voltage
V
CES
V
Gate-Emitter Voltage
V
GES
V
DC
I
C
Collector Current
A
1ms
I
CP
DC
I
F
Forward Current
A
1ms
I
FM
Collector Power Dissipation
P
C
W
Junction Temperature
T
j
°C
Storage Temperature
T
stg
°C
Isolation Voltage
V
iso
V
RMS
Terminals (M4/M6)
N·m
-
Screw Torque
(kgf·cm)
Mounting
Notes; *1: RMS current of Diode
£
120 Arms
*2: Recommended value 1.18 / 2.45 N·m (12 / 25 kgf·cm)
*3: Recommended value 2.45 N·m (25 kgf·cm)
Value
1200
±20
400
800
400
800
2080
-40 ~ +150
-40 ~ +125
2500(AC 1 minute)
1.37(14) / 2.94(30)
*3
2.94(30)
*2
*1
CHARACTERISTICS (T
C
=25°C)
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
-
-
Collector-Emitter Cut-Off Current
I
CES
mA
1.0
V
CE
=1200V, V
GE
=0V
-
-
Gate-Emitter Leakage Current
I
GES
nA
V
GE
=±20V, V
CE
=0V
±500
-
Collector-Emitter Saturation Voltage
V
CE(sat)
V
2.2
2.8
I
C
=400A, V
GE
=15V
-
-
Gate-Emitter Threshold Voltage
V
GE(TO)
V
10
V
CE
=5V, I
C
=400mA
-
-
Input Capacitance
C
ies
pF
37000
V
CE
=10V, V
GE
=0V, f=1MHz
-
Rise Time
t
r
0.25
0.7
V
CC
=600V
R
L
=1.5W
-
Turn-ON Time
t
on
0.4
0.9
Switching Times
ms
*4
R
G
=2.7W
-
Fall Time
t
f
0.2
0.35
V
GE
=±15V
-
Turn-Off Time
t
off
0.7
1.1
-
Peak Forward Voltage Drop
V
FM
V
2.5
3.5
I
F
=400A, V
GE
=0V
-
-
Reverse Recovery Time
t
rr
0.4
I
F
=400A, V
GE
=-10V, di/dt=400A/ms
ms
IGBT
R
th(j-c)
0.06
-
-
Thermal Impedance
Junction to case
°C/W
FWD
R
th(j-c)
0.10
Notes; *4:R
G
value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable R
G
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
HITACHI [ HITACHI SEMICONDUCTOR ]
