PF01411B
MOS FET Power Amplifier Module
for E-GSM Handy Phone
ADE-208-434B (Z)
3rd Edition
Nov. 1997
Application
•
For E-GSM class4 880 to 915 MHz
•
For 3.5 V nominal battery use
Features
•
High gain 3stage amplifier : 0 dBm input
•
Lead less thin & Small package : 2 mm Max, 0.2cc
•
High efficiency : 45% Typ at 35.5 dBm
•
Wide gain control range : 70 dB Typ
Pin Arrangement
3
2
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
4
G
G
1
G
G
Absolute Maximum Ratings
(Tc = 25°C)
Item
Supply voltage
Supply current
V
APC
voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
V
DD
I
DD
V
APC
Pin
Tc (op)
Tstg
Pout
Rating
8
3
4
10
–30 to +100
–30 to +100
5
Unit
V
A
V
mW
°C
°C
W