HMC616LP3 / 616LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
7
Amplifiers - low Noise - smT
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Vdd (V)
rbias (Ω)
min
max
recommended
2.7k
3V
1k
[1]
open Circuit
3.92k
4.7k
10k
820
5V
0
open Circuit
2k
3.92k
10k
idd (mA)
27
31
33
39
73
84
91
95
[1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
rf input power (rfiN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous pdiss (T= 85 °C)
(derate 8.93 mw/°C above 85 °C)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
+6 V
+10 dBm
150 °C
0.58 w
112 °C/w
-65 to +150 °C
-40 to +85 °C
Typical Supply
Current vs. Vdd (Rbias = 3.92kΩ)
Vdd (V)
2.7
3.0
3.3
4.5
5.0
5.5
idd (mA)
20
30
40
80
90
100
Note: Amplifier will operate over full voltage range shown above.
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
7-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
