HMC-ALH369
v00.1007
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Features
Excellent Noise Figure: 2.0 dB
Gain: 22 dB
P1dB Output Power: +11 dBm
Supply Voltage: +5V @ 66 mA
Die Size: 2.10 x 1.37 x 0.1 mm
Typical Applications
This HMC-ALH369 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
AMPLIFIERS - LOW NOISE - CHIP
• Phased Arrays
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC-ALH369 is a GaAs MMIC HEMT three stage,
self-biased Low Noise Amplifier die which operates
between 24 and 40 GHz. The amplifier provides 22 dB
of gain, from a single bias supply of +5V @ 66 mA with
a noise figure of 2 dB. The HMC-ALH369 amplifier die
is ideal for integration into Multi-Chip-Modules (MCMs)
due to its small size (2.88 mm2).
Electrical Specifi cations
[1]
,
T
A
= +25° C, Vdd= +5V, Idd = 66mA
Parameter
Frequency Range
Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Supply Current (Idd)
9
20
Min.
Typ.
24 - 32
22
2
12
12
11
66
9
2.5
15
Max.
Min.
Typ.
32 - 40
17
2.1
8
12
11
66
2.5
Max.
Units
GHz
dB
dB
dB
dB
dBm
mA
[1] Unless otherwise indicated, all measurements are from probed die
0 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
