v01.0300
MICROWAVE CORPORATION
HMC224MS8
GaAs MMIC T/R SWITCH
5.0 - 6.0 GHz
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
14
SWITCHES - SMT
Typical Application Circuit
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Notes:
1. Control Inputs A and B can be driven directly with CMOS logic
(HC) with V of 3 to 8 Volts applied to the CMOS logic gates
and to pin 4 of the RF switch.
2. Set V to 5 Volts and use HCT series logic to provide a TTL
driver interface.
3. Highest RF signal power capability is achieved with V set to
+10V. However, the switch will operate properly (but at
lower RF power capability) at bias voltages down to +3V.
4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B
ports. Resistors R1, R2, R3 = 100 Ohms should be placed
close to the Vdd, A and B ports. Use resistor size 0402 to
minimize parasitic inductances and capacitances.
5. DC Blocking capacitors are not required for each RF port.
6. Evaluation PCB available.
14 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
