v02.1203
MICROWAVE CORPORATION
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Features
Isolation: 55 dB @ 2.0 GHz
43 dB @ 6.0 GHz
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
Non-Reflective Design
Surface Mount Ceramic Package
Direct Replacement for HMC132C8
Typical Applications
The HMC232C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
Functional Diagram
General Description
The HMC232C8 is a broadband high isolation
non-reflective GaAs MESFET SPDT switch in a
non-hermetic surface mount ceramic package.
Covering DC to 8.0 GHz, the switch features >55
dB isolation up to 2 GHz and >42 dB isolation
up to 8.0 GHz. The switch operates using
complementary negative control voltage logic
lines of -5/0V and requires no bias supply. This
product is a form, fit & functional replacement for
the HMC132C8.
14
SWITCHES - SMT
Electrical Specifications,
T
A
= +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
0.5 - 8.0 GHz
0.5 - 8.0 GHz
22
40
50
38
37
Min.
Typ.
1.2
1.6
2.2
55
43
42
19
12
10
13
8
7
26
46
Max.
1.5
2.0
2.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Insertion Loss
Isolation
Return Loss
“On State”
Return Loss RF1, RF2
“Off State”
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3
5
ns
ns
14 - 88
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
