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HMC234C8 参数 Datasheet PDF下载

HMC234C8图片预览
型号: HMC234C8
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓表面贴装高隔离SPDT开关, DC - 8.0 GHz的 [GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz]
分类和应用: 开关光电二极管分离技术隔离技术
文件页数/大小: 6 页 / 248 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC234C8
v03.1105
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Features
Isolation: 52 dB @ 2.0 GHz
40 dB @ 6.0 GHz
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
Non-Reflective Design
Surface Mount Ceramic Package
Typical Applications
The HMC234C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
8
SWITCHES - SMT
• Test Instrumentation
Functional Diagram
General Description
The HMC234C8 is a broadband high isolation non-
reflective GaAs MESFET SPDT switch in a non-
hermetic surface mount ceramic package. Covering
DC to 8.0 GHz, the switch features >52 dB isolation
up to 2 GHz and >38 dB isolation up to 8.0 GHz.
The switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply. This product is an excellent pin-for-pin
replacement to the SMDI SSW124.
Electrical Specifications,
T
A
= +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Insertion Loss
Frequency
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
“On State”
DC - 2.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
0.5 - 8.0 GHz
0.5 - 8.0 GHz
22
40
47
35
33
Min.
Typ.
1.4
1.6
2.1
52
40
38
15
12
14
9
6
26
46
Max.
1.7
1.9
2.4
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Isolation
Return Loss
Return Loss RF1, RF2
“Off State”
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
3
5
ns
ns
8 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com