HMC232G7
v02.1006
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 6 GHz
Absolute Maximum Ratings
RF Input Power (V
A
, V
B
= 0/-5V)
(0.5 - 6 GHz)
Control Voltage Range (A & B)
Channel Temperature
Thermal Resistance (R
TH
)
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+30 dBm (@ +50 °C)
+1.0V to -7.5 Vdc
150 °C
94 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
A
High
Low
Control Voltages
State
Low
High
Bias Condition
0 to -0.2V @ 10 uA Max.
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
Truth Table
Control Input
B
Low
High
Signal Path State
RFC to RF1
ON
OFF
RFC to RF2
OFF
ON
10
SWITCHES - SMT
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Caution: Do not “Hot Switch” power levels greater than +27
dBm (
V
A
, V
B
= 0/-5V
).
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%
2. CONDUCTOR TRACES MATERIAL: THICK FILM TUNGSTEN.
3. LEAD, BASE, COVER MATERIAL: KOVAR™.
4. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN, OVER
ELECTROLYTIC NICKEL 50 MICROINCHES MIN.
5. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
6. TOLERANCES: .±005 [0.13] UNLESS OTHERWISE SPECIFIED.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
10 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
