HMC263
v04.0907
GaAs MMIC LOW NOISE
AMPLIFIER, 24 - 36 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 7.69 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-5 dBm
175 °C
0.692 W
130 °C/W
-65 to +150 °C
-55 to +85 °C
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LOW NOISE AMPLIFIERS - CHIP
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
Standard
GP-2
[2]
[1]
Alternate
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HITTITE [ HITTITE MICROWAVE CORPORATION ]
