HMC283
v03.1007
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Typical Applications
The HMC283 is ideal for:
• Millimeterwave Point-to-Point Radios
Features
High Gain: 21 dB
Psat Output Power: +21 dBm
Wideband Performance: 17 - 40 GHz
Small Chip Size: 1.72 x 0.88 x 0.1 mm
3
LINEAR & POWER AMPLIFIERS - CHIP
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC283 chip is a four stage GaAs MMIC Medium
Power Amplifier (MPA) which covers the frequency
range of 17 to 40 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
small size. The chip utilizes a GaAs PHEMT process
offering 21 dB gain and +21 dBm output power from a
bias supply of +3.5V @ 300 mA. The HMC283 may
be used as a frequency doubler. A B.I.T. (Built-In-Test)
pad (Vdet) allows monitoring microwave output power.
All data is with the chip in a 50 ohm test fixture con-
nected via 0.076 x 0.0127mm (3mil x 0.5mil) ribbon
bonds of minimal length 0.31mm (<12mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd= +3.5V*, ldd = 300 mA
Parameter
Frequency Range
Gain
Gain Flatness (Any 1 GHz BW)
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.)
40
14
17
21
16
Min.
Typ.
17 - 40
21
±0.8
9
6
50
18
21
26
10
300
14
400
Max.
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
*Vdd = Vdd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vgg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
3-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
