v03.1103
MICROWAVE CORPORATION
HMC308
GENERAL PURPOSE 100 mW GaAs
MMIC AMPLIFIER, 0.8 - 3.8 GHz
Features
Gain: 18 dB
P1dB Output Power: +17 dBm@ +5V
Single Supply: +3V or +5V
No External Components
Integrated DC Blocks
Ultra Small Package: SOT26
8
AMPLIFIERS - SMT
Typical Applications
Broadband or Narrow Band Applications:
• Cellular/PCS/3G
• Fixed Wireless & Telematics
• Cable Modem Termination Systems
• WLAN, Bluetooth & RFID
Functional Diagram
General Description
The HMC308 is a low cost MESFET MMIC ampli-
fier that operates from a single +3 to +5V supply
from 0.8 to 3.8 GHz. The surface mount SOT26
amplifier can be used as a broadband amplifier
stage or used with external matching for optimized
narrow band applications. With Vdd biased at +5V,
the HMC308 offers 18 dB of gain and +20 dBm of
saturated output power while requiring only 53 mA
of current. This amplifier is ideal as a driver amplifier
for transmitters or for use as a local oscillator (LO)
amplifier to increase drive levels for passive mixers.
The amplifier occupies 0.014 in
2
(9 mm
2
), making it
ideal for compact radio designs.
Electrical Specifications,
T
A
= +25° C, as a function of Vdd
Vdd = +3V
Parameter
Min.
Frequency Range
Gain
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
23
12
13
Typ.
2.3 - 2.7
15.5
0.025
11
17
14
17
26
7
50
27
14
0.035
14
Max.
Min.
Typ.
0.8 - 2.3
18
0.025
8
13
17
20
30
7.5
53
26
13.5
0.035
13
Max.
Min.
Typ.
2.3 - 2.7
16
0.025
11
12
16.5
19.5
29
7
53
24
12
0.035
10
Max.
Min.
Typ.
2.7 - 3.8
13
0.025
13
13
15
17
27
7
53
0.035
Max.
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dB
mA
Vdd = +5V
Vdd = +5V
Vdd = +5V
Units
8 - 42
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
