v02.0703
MICROWAVE CORPORATION
HMC313
Features
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
8
AMPLIFIERS - SMT
Typical Applications
Ideal as a Driver & Amplifier for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5.0 - 6.0 GHz UNII & HiperLAN
Functional Diagram
General Description
The HMC313 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifier that
operates from a single Vcc supply. The surface
mount SOT26 amplifier can be used as a
broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313 offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current. The “HMC313 Biasing
and Impedance Matching Techniques” application
note available within the “Application Notes” section
offers recommendations for narrow band operation.
Electrical Specifications,
T
A
= +25 °C
Vcc = +5V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
24
11
14
Typ.
DC - 6
17
0.02
7
6
30
14
15
27
6.5
50
20
0.03
Max.
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
Units
8 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
