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HMC315 参数 Datasheet PDF下载

HMC315图片预览
型号: HMC315
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓的InGaP HBT MMIC放大器达林顿, DC - 7.0 GHz的 [GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz]
分类和应用: 放大器
文件页数/大小: 6 页 / 291 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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MICROWAVE CORPORATION
v01.0701
HMC315
Features
Saturated Output Power: +17 dBm
Output IP3: +33 dBm
Gain: 15 dB
Single Supply: +5V to +7V
Ultra Small Package: SOT26
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
AMPLIFIERS - SMT
Typical Applications
The HMC315 is ideal for:
• Fiber Optic OC-48 Systems
• Microwave Test Instrumentation
• Broadband Mobile Radio Platforms
Functional Diagram
General Description
The HMC315 is an ultra broadband GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifier that operates from a single positive
supply. The surface mount SOT26 amplifier can
be used as a broadband gain stage, or used
with external matching for optimized narrow band
applications. The Darlington configuration results
in reduced sensitivity to normal process varia-
tions and provides a good 50-ohm input/output
port match. The amplifier provides 15 dB of gain
and +17 dBm of saturated power while operating
from a single positive +7V supply.
Electrical Specifications,
T
A
= +25° C, As a Function of Vcc
Vcc = +5V
Parameter
Min.
Frequency Range
Gain
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (OIP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
7
3
18
8
10
23
11
Typ.
DC - 7
14
0.015
10
7
21
11
13
26
6.5
30
17
0.025
7
3
18
13
15
30
11
Max.
Min.
Typ.
DC - 7
15
0.015
10
7
21
16
17.5
33
6.5
50
18
0.025
Max.
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
Vcc = +7V
Units
8 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com