HMC311LP3
/
311LP3E
v04.1108
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Typical Applications
Features
P1dB Output Power: +15.5 dBm
Output IP3: +32 dBm
Gain: 14.5 dB
50 Ohm I/O’s
16 Lead 3x3mm SMT Package: 9mm
2
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
The HMC311LP3(E) is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio
Functional Diagram
General Description
The HMC311LP3(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC
SMT DC to 6 GHz amplifiers. This 3x3mm
QFN packaged amplifier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC311LP3(E) offers 14.5 dB of gain and an output
IP3 of +32 dBm while requiring only 56 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifi cations,
Vs= 5V, Rbias= 22 Ohm, T
A
= +25° C
Parameter
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
DC - 6 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
DC - 6 GHz
13.5
12.0
10.0
Min.
13.0
12.5
12.0
Typ.
14.5
14.3
14.0
0.005
0.008
0.012
13
11
15
18
15.5
15.0
13.0
32
30
28
24
4.5
55
74
0.008
0.012
0.016
Max.
Units
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
9-8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
