v02.1202
MICROWAVE CORPORATION
HMC327MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Features
Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
8
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.6 GHz applications:
• Wireless Local Loop
Functional Diagram
General Description
The HMC327MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
3.0 and 4.0 GHz. The amplifier is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifier provides 21 dB of gain,
+30 dBm of saturated power at 45% PAE from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when
the amplifier is not in use.
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vctl = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
36
24
17
Min.
Typ.
3.0 - 4.0
21
0.025
15
8
27
30
40
5.0
0.002 / 250
7
40
24
0.035
Max.
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
8 - 104
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
