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HMC342 参数 Datasheet PDF下载

HMC342图片预览
型号: HMC342
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓MMIC低噪声放大器, 13 - 25 GHz的 [GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz]
分类和应用: 射频和微波射频放大器微波放大器
文件页数/大小: 6 页 / 189 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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v00.0301
MICROWAVE CORPORATION
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Features
Noise Figure : 3.5 dB
Gain: 20 dB
Single Supply : +3V @ 36 mA
Small Size: 1.06 mm x 2.02 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC342 is ideal for:
• Microwave Point-to-Point Radios
• Millimeterwave Point-to-Point Radios
• VSAT & SATCOM
Functional Diagram
General Description
The HMC342 chip is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 13 to 25 GHz. The chip can easily be inte-
grated into Multi-Chip Modules (MCMs) due to its
small (2.14 mm2) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3.0V @ 36 mA with a noise figure
of 3.5 dB. All data is with the chip in a 50 ohm
test fixture connected via 0.025 mm (1 mil) diam-
eter wire bonds of minimal length 0.31 mm (<12
mils).
Electrical Specifications,
T
A
= +25° C, Vdd = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
6
6
39
1
3
8
16
Min.
Typ.
13 - 25
21
.03
3.5
13
14
45
5
8
13
41
26
.04
4.5
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
dBm
mA
1 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com