v01.0604
MICROWAVE CORPORATION
HMC356LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Features
Noise Figure:
≤
1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0V @ 104 mA
50 Ohm Matched Output
8
AMPLIFIERS - SMT
Typical Applications
The HMC356LP3 is ideal for
basestation receivers:
• GSM 450 & GSM 480
• CDMA 450
• Private Land Mobile Radio
Functional Diagram
General Description
The HMC356LP3 high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier is ideal for GSM
& CDMA cellular basestation and Mobile Radio
front-end receivers operating between 350 and 550
MHz. This LNA has been optimized to provide 1.0
dB noise figure, 17 dB gain and +38 dBm output IP3
from a single supply of +5.0V @ 104 mA. Input and
output return losses are 15 dB typical, with the LNA
requiring only four external components to optimize
the RF input match, RF ground and DC bias. The
HMC356LP3 shares the same package and pinout
with the HMC372LP3 high IP3 LNA. A low cost,
leadless 3x3 mm (LP3) SMT QFN package houses
the low noise amplifier.
Electrical Specifications,
T
A
= +25° C, Vs = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
34
17
15
Min.
Typ.
350 - 550
17
0.0032
1.0
17
12
24
21
22.5
38
104
0.010
1.4
Max.
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
8 - 118
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
