v01.0604
MICROWAVE CORPORATION
HMC375LP3
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.9 dB
+34 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0 V @ 136 mA
50 Ohm Matched Output
8
AMPLIFIERS - SMT
Typical Applications
The HMC375LP3 is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• DECT
Functional Diagram
General Description
The HMC375LP3 high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier is ideal for
GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz.
This LNA has been optimized to provide 0.9 dB
noise figure, 17 dB gain and +33 dBm output IP3
from a single supply of +5.0V @ 136mA. Input and
output return losses are 14 dB typical with the LNA
requiring minimal external components to optimize
the RF input match, RF ground and DC bias. The
HMC375LP3 shares the same package with the
HMC356LP3 and HMC372LP3 high IP3 LNAs.
A low cost, leadless 3x3 mm (LP3) SMT QFN
package houses the low noise amplifier.
Electrical Specifications,
T
A
= +25° C, Vs = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for
1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
Supply Current (Idd)
16
16.5
Min.
Typ.
1.8 - 1.9
18.5
0.014
1.0
12
13
35
18.5
19.5
34
136
16
0.021
1.35
15.5
Max.
Min.
Typ.
1.9 - 2.0
17.5
0.014
0.95
13
16
34
18.5
19.5
33.5
136
15
0.021
1.2
15
Max.
Min.
Typ.
2.0 - 2.1
17
0.014
0.9
14
11
34
18
19.5
33
136
14.5
0.021
1.2
13
Max.
Min.
Typ.
2.1 - 2.2
15
0.014
0.9
15
8
34
17.5
19.5
32.5
136
0.021
1.3
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
dBm
mA
8 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
