v01.0604
MICROWAVE CORPORATION
HMC384LP4
MMIC VCO w/ BUFFER
AMPLIFIER, 2.05 - 2.25 GHz
Features
Pout: +3.5 dBm
Phase Noise: -112 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 35 mA
QFN Leadless SMT Package, 16 mm
2
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Functional Diagram
General Description
The HMC384LP4 is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO with
integrated resonator, negative resistance device,
varactor diode, and buffer amplifier. The VCO’s
phase noise performance is excellent over tem-
perature, shock, vibration and process due to the
oscillator’s monolithic structure. Power output is
3.5 dBm typical from a 3.0V supply voltage. The
voltage controlled oscillator is packaged in a low
cost leadless QFN 4 x 4 mm surface mount pack-
age.
15
VCOs - SMT
Electrical Specifications,
T
A
= +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
6
0
35
10
0.5
Min.
Typ.
2.05 - 2.25
3.5
-112
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
µA
dB
-7
-23
2.5
5
0.25
dBc
dBc
MHz pp
MHz/V
MHz/°C
15 - 8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
