HMC396
v02.0109
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5.0 Vdc)
Junction Temperature
Continuous Pdiss (T= 85 °C)
(derate 5.21 mW/°C above 85 °C)
Thermal Resistance
(junction to die bottom)
Storage Temperature
Operating Temperature
+7 Vdc
+10 dBm
150 °C
0.339 W
192 °C/W
-65 to +150 °C
-55 to +85 °C
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2 - 11
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Die Packaging Information
[1]
Standard
GP-3 (Gel Pack)
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
