HMC406MS8G
/
406MS8GE
v05.1209
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Typical Applications
The HMC406MS8G(E) is ideal for:
• WiMAX & WiLAN
• DSRC
• Military & Maritime
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
11
LINEAR & POWER AMPLIFIERS - SMT
• Private Mobile Radio
• UNII & ISM
Functional Diagram
General Description
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplifier which operates between 5 and 6
GHz. The amplifier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplifier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifi cations,
T
A
= +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
34
21
13
Min.
Typ.
5-6
16
0.03
10
8
24
27
38
6.0
0.002 / 300
7
35
34
24
21
0.04
14
Max.
Min.
Typ.
5.7 - 5.9
17
0.03
11
9
27
29
38
6.0
0.002 / 300
7
35
21
0.04
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
11 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
