v01.1201
MICROWAVE CORPORATION
HMC414MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 2.2 - 2.8 GHz
Features
Gain: 20 dB
Saturated Power: +30 dBm
32% PAE
Supply Voltage: +2.75V to +5.0 V
Power Down Capability
Low External Part Count
1
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power
amplifier for 2.2 - 2.7 GHz applications:
• BLUETOOTH
• MMDS
Functional Diagram
General Description
The HMC414MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
2.2 and 2.8 GHz. The amplifier is packaged in
a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifier provides 20 dB of gain,
+30 dBm of saturated power at 32% PAE from
a +5.0V supply voltage. The amplifier can also
operate with a 3.6V supply. Vpd can be used for
full power down or RF output power/current con-
trol.
Electrical Specifications,
T
A
= +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
S a t u r a t e d O u t p u t Po w e r ( P s a t )
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (I c c )
Control Current (Ipd)
Vpd= 0V/3.6V
3
6
21
23
30
17
Typ.
2.2 - 2.8
20
0.03
8
9
25
27
35
6.5
0.002 / 240
7
25
0.04
3
6
23
26
35
17
Max.
Min.
Typ.
2.2 - 2.8
20
0.03
8
9
27
30
39
7.0
0.002 / 300
7
25
0.04
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
Vs= 5.0V
1 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
