HMC435MS8G
/
435MS8GE
v05.0110
SPDT NON-REFLECTIVE
SWITCH, DC - 4 GHz
Typical Applications
The HMC435MS8G(E) is ideal for:
• Basestations & Repeaters
• Cellular/3G and WiMAX/4G
• Infrastructure and Access Points
• CATV/CMTS
• Test Instrumentation
Features
High Isolation: 60 dB @ 1 GHz
50 dB @ 2 GHz
Positive Control: 0/+5V
Input IP3: 51 dBm
Non-Reflective Design
Ultra Small MSOP-86 Package: 14.8 mm
2
Functional Diagram
General Description
The HMC435MS8G(E) is a non-reflective DC to
4 GHz GaAs MESFET SPDT switch in a low cost 8
lead MSOP8G surface mount package with exposed
ground paddle. The switch is ideal for cellular/3G
and WiMAX/4G applications yielding up to 60 dB
isolation, low 0.8 dB insertion loss and +50 dBm
input IP3. Power handling is excellent up through the
3.8 GHz WiMAX band with the switch offering a P1dB
compression of +31 dBm. On-chip circuitry allows
positive voltage control of 0/+5 Volts at very low DC
currents.
11
SWITCHES - SPDT - SMT
Electrical Specifi cations,
T
A
= +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Insertion Loss
Frequency
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
DC - 2.5 GHz
DC - 3.6 GHz
DC - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 4.0 GHz
0.5 - 1.0 GHz
0.5 - 2.5 GHz
0.5 - 4.0 GHz
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
60
ns
ns
56
46
43
37
30
15
13
11
16
27
48
45
41
Min.
Typ.
0.8
1.2
1.5
60
50
47
41
35
20
17
15
21
31
51
48
45
Max.
1.0
1.5
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Isolation (RFC to RF1/RF2)
Return Loss (On State)
Return Loss (Off State)
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
11 - 122
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
