HMC459
v01.1007
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 18 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
3
LINEAR & POWER AMPLIFIERS - CHIP
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
2
Vgg2
Gate Control 2 for amplifier. +3V should be applied to Vgg2
for nominal operation. Vgg2 may be adjusted between 0 to
+5V to temperature compensate gain.
4
RFOUT & Vdd
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
5
Vgg1
Gate Control 1 for amplifier. Adjust between -2 to 0V
to achieve Idd= 290 mA.
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit here in.
6
ACG2
Low frequency termination. Attach bypass capacitor per
application circuit here in.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
3 - 32
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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HITTITE [ HITTITE MICROWAVE CORPORATION ]
