v03.0304
MICROWAVE CORPORATION
HMC463
GaAs PHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2.0 - 20.0 GHz
Gain @ Several Control Voltages
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
0
2
4
6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)(AGC)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 50 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
20
22
+9.0 Vdc
-2.0 to 0 Vdc
1
AMPLIFIERS - CHIP
1 - 101
GAIN (dB)
(Vdd -9.0)
Vdc to +2.0 Vdc
+23 dBm
175 °C
4.5 W
20 °C/W
-65 to +150 °C
-55 to +85 °C
Vgg2=-1.3 V
Vgg2=-1.2 V
Vgg2=-1.1 V
Vgg2=-1.0 V
Vgg2=-0.9 V
Vgg2=-0.6 V
Vgg2=-0.4 V
Vgg2=0 V
8
10
12
14
16
18
Storage Temperature
Operating Temperature
FREQUENCY (GHz)
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
Idd (mA)
58
60
62
Outline Drawing
+5.0
+5.5
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
