MICROWAVE CORPORATION
v02.0704
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Features
+26 dBm P1dB Output Power
Gain: 16 dB
+30 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC464 wideband driver is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between 2 and
20 GHz. The amplifier provides 16 dB of gain, +30
dBm Output IP3 and +26 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain flatness is excellent from
2 - 18 GHz making the HMC464 ideal for EW,
ECM and radar driver amplifier applications. The
HMC464 amplifier I/O’s are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
23.5
14
Min.
Typ.
2.0 - 6.0
16
±0.25
0.02
15
14
26.5
28
32
4.0
290
22
0.03
13
Max.
Min.
Typ.
6.0 - 18.0
16
±0.5
0.02
17
12
26
27.5
30
4.0
290
19
0.03
11
Max.
Min.
Typ.
18.0 - 20.0
14
±0.75
0.03
13
11
22
24.5
24
6.0
290
0.04
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
