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HMC478ST89E 参数 Datasheet PDF下载

HMC478ST89E图片预览
型号: HMC478ST89E
PDF下载: 下载PDF文件 查看货源
内容描述: 的SiGe HBT增益模块放大器MMIC , DC - 4.0 GHz的 [SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz]
分类和应用: 射频和微波射频放大器微波放大器
文件页数/大小: 6 页 / 335 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC478ST89
/
478ST89E
v02.1205
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
5
AMPLIFIERS - SMT
Designer’s Kit
Available
Typical Applications
The HMC478ST89 / HMC478ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Features
P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SOT89 Package
Robust 1,000V ESD, Class 1C
Included in the HMC-DK001 Designer’s Kit
Functional Diagram
General Description
The HMC478ST89 & HMC478ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 4 GHz. Packaged
in an industry standard SOT89, the amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage as
well as a LO or PA driver with up to +20 dBm output
power. The HMC478ST89 & HMC478ST89E offers 22
dB of gain with a +30 dBm output IP3 at 850 MHz while
requiring only 62mA from a single positive supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
Electrical Specifications,
Vs= 5.0 V, Rbias= 18 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
DC - 4.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
15
13
10
8
Min.
19
16
13
11
Typ.
22
19
16
14
0.015
15
10
13
13
15
20
18
16
13
11
30
28
25
3
4
62
0.02
Max.
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
5 - 438
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com