HMC484MS8G / 484MS8GE
v04.0608
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Bias Voltage & Current
Absolute Maximum Ratings
Vdd (Vdc)
Typical Idd (μA)
RF Input Power (Vctl = 0V/+8V)
+40 dBm (T = +85 °C)
(0.5 - 3 GHz)
+3
+5
0.5
10
50
75
Supply Voltage Range (Vdd)
+13 Vdc
(Vctl = 0V)
+8
Control Voltage Range (A & B)
Vdd - 13 Vdc to Vdd + 0.7 Vdc
+10
Hot Switch Power Level
(Vdd = +8V)
39 dBm
150 °C
1.6 W
Channel Temperature
Control Voltages
Continuous Pdiss (T = 85 °C)
(derate 25 mW/°C above 85 °C)
State
Bias Condition
Thermal Resistance
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
40 °C/W
Low
0 to +0.2 Vdc @ 10 μA Typical
Vdd 0.2 Vdc @ 10 μA Typical
-65 to +150 °C
-40 to +85 °C
Class 1A
High
Truth Table
Control Input (Vctl)
Signal Path State
11
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
A
B
RFC to RF1
RFC to RF2
High
Low
Low
Low
High
Low
Off
On
Off
On
Off
Off
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical 0.5 to 3.0 GHz
Compression vs. Bias Voltage (Vdd)
Input Power for 0.1 dB
Compression
Input Power for 1.0 dB
Compression
Bias Vdd
(Volts)
+3
(dBm)
32
(dBm)
35.5
40
+5
36
+8
39
>40
>40
+10
>40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HITTITE [ HITTITE MICROWAVE CORPORATION ]
