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HMC516 参数 Datasheet PDF下载

HMC516图片预览
型号: HMC516
PDF下载: 下载PDF文件 查看货源
内容描述: 的GaAs PHEMT MMIC低噪声放大器, 7 - 17 GHz的 [GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz]
分类和应用: 放大器射频微波
文件页数/大小: 6 页 / 250 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC516
v02.0907
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 17 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
The HMC516 is ideal for use as a LNA or driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Features
Noise Figure: 1.8 dB
Gain: 20 dB
OIP3: +20 dBm
Single Supply: 3V @ 65 mA
50 Ohm Matched Input/Output
Die Size: 2.52 x 1.32 x 0.1 mm
Functional Diagram
General Description
The HMC516 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 7 to 17 GHz frequency range. The HMC516
provides 20 dB of small signal gain, 1.8 dB of noise
figure and has an output IP3 greater than +20 dBm.
The chip can easily be integrated into hybrid or MCM
assemblies due to its small size. All data is tested
with the chip in a 50 Ohm test fixture connected via
0.075mm (3 mil) ribbon bonds of minimal length 0.31
mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires
may also be used to make the RFIN and RFOUT
connections.
Electrical Specifi cations,
T
A
= +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
10
17
Min.
Typ.
7-9
19.5
0.02
2.5
8
13
13
15
20
65
88
12
0.03
3.3
18
Max.
Min.
Typ.
9 - 12
20.5
0.02
2.0
10
15
15
16
20
65
88
13
0.03
2.6
18
Max.
Min.
Typ.
12 - 17
20.5
0.02
1.8
10
17
16
17
20
65
88
0.03
2.3
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com