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HMC565 参数 Datasheet PDF下载

HMC565图片预览
型号: HMC565
PDF下载: 下载PDF文件 查看货源
内容描述: 的GaAs PHEMT MMIC低噪声放大器, 6 - 20 GHz的 [GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz]
分类和应用: 放大器
文件页数/大小: 6 页 / 314 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC565
v00.0206
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 6 - 20 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC565 is ideal for use as a LNA or driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Features
Noise Figure: 2.3 dB
Gain: 22 dB
OIP3: 20 dBm
Single Supply: +3V @ 53 mA
50 Ohm Matched Input/Output
Small size: 2.53 x 0.98 x 0.10 mm
Functional Diagram
General Description
The HMC565 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifier (LNA) chip which operates
from 6 to 20 GHz. The HMC565 features 22 dB of small
signal gain, 2.3 dB of noise figure and has a consistent
IP3 of 20 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, widband performance, single
+3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Electrical Specifications,
T
A
= +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
17
7
20
Min.
Typ.
6 - 12
23
0.025
2.3
15
15
10
12
20
53
17
7
0.035
2.8
17
Max.
Min.
Typ.
12 - 20
21
0.025
2.5
12
10
10
12
20
53
0.035
3.0
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 210
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com