HMC636ST89
/
636ST89E
v02.0311
GaAs pHEMT HiGH LinEAriTy
Gain Block, 0.2 - 4.0 GHz
Features
low noise figure: 2.2 dB
High p1dB output power: +22 dBm
High output ip3: +40 dBm
Gain: 13 dB
50 ohm i/o’s - no external matching
industry standard soT89 package
Typical Applications
The HmC636sT89(e) is ideal for:
• Cellular / PCS / 3G
• WiMAX, WiBro, & Fixed Wireless
• CATV & Cable Modem
9
Amplifiers - lineAr & power - smT
• Microwave Radio
Functional Diagram
General Description
The HmC636sT89(e) is a GaAs pHemT, High
linearity, low noise, wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. packaged in an industry
standard soT89, the amplifier can be used as either
a cascadable 50 ohm gain stage, a pA pre-Driver, a
low noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any pCB material or thickness.
Electrical Specifications,
Vs= 5.0 V, T
A
= +25° C
parameter
frequency range
Gain
Gain Variation over Temperature
input return loss
output return loss
reverse isolation
output power for 1 dB Compression (p1dB)
output Third order intercept (ip3)
noise figure
supply Current (icq)
19
36
10
min
Typ.
0.2 - 2.0
13
0.01
10
13
22
22
39
2.5
155
20
36
0.02
5
max
min.
Typ.
2.0 - 4.0
10
0.01
10
15
20
23
39
2
155
175
0.02
max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dB
mA
note: Data taken with broadband bias tee on device output.
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
