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HT48RA5 参数 Datasheet PDF下载

HT48RA5图片预览
型号: HT48RA5
PDF下载: 下载PDF文件 查看货源
内容描述: 遥控型8位MCU [Remote Type 8-Bit MCU]
分类和应用: 遥控
文件页数/大小: 38 页 / 257 K
品牌: HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
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HT48RA5/HT48CA5
Pin Description
Pin Name
I/O
ROM Code
Option
Wake-up*
Pull-high***
Description
Bidirectional 8-bit input/output port. Each bit can be configured as a wake-up in-
put by a option. Software instructions determine the CMOS output or Schmitt trig-
ger input with/without pull-high resistor. The pull-high resistor of each input/output
line is also optional.
Bidirectional 8-bit input/output port. Software instructions determine the CMOS
output or Schmitt trigger input with/without pull-high resistor. The pull-high resis-
tor of each input/output line is also optional. The output mode of PB0 can be
used as an internal PFD signal output and it can be used as a various frequency
carrier signal.
Bidirectional 6-bit input/output port. Software instructions determine the CMOS
output or Schmitt trigger input with/without pull-high resistor. The pull-high resis-
tor of each input/output line is also optional. PC0 and PC5 are pin shared with
TMR0 and TMR1 function pins.
Bidirectional 1-bit input/output port. Software instructions determine the CMOS
output or Schmitt trigger input with/without pull-high resistor. The pull-high resis-
tor of this input/output line is also optional. PF0 is pin shared with the INT func-
tion pin.
OSC1, OSC2 are connected to an RC network or Crystal (determined by option)
for the internal system clock. In the case of RC operation, OSC2 is the output
terminal for 1/4 system clock.
Schmitt trigger reset input, active low.
Negative power supply, ground
Positive power supply
PA0~PA7
I/O
PB0/PFD
PB1~PB7
I/O
Pull-high**
PB0 or PFD
PC0/TMR0
PC1~PC4
PC5/TMR1
I/O
Pull-high*
PF0/INT
I/O
Pull-high*
OSC1
OSC2
RES
VSS
VDD
Note:
I
O
I
¾
¾
* Bit option
** Nibble option
*** Byte option
Crystal
or RC
¾
¾
¾
Absolute Maximum Ratings
Supply Voltage ...........................V
SS
-0.3V
to V
SS
+6.0V
Input Voltage..............................V
SS
-0.3V
to V
DD
+0.3V
I
OL
Total ..............................................................150mA
Total Power Dissipation .....................................500mW
Storage Temperature ............................-50°C to 125°C
Operating Temperature...........................-40°C to 85°C
I
OH
Total............................................................-100mA
Note: These are stress ratings only. Stresses exceeding the range specified under
²Absolute
Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed
in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
Rev. 1.40
3
May 22, 2009