欢迎访问ic37.com |
会员登录 免费注册
发布采购

HT6116-70 参数 Datasheet PDF下载

HT6116-70图片预览
型号: HT6116-70
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2K ?? 8位的SRAM [CMOS 2K??8-Bit SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 307 K
品牌: HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
 浏览型号HT6116-70的Datasheet PDF文件第2页浏览型号HT6116-70的Datasheet PDF文件第3页浏览型号HT6116-70的Datasheet PDF文件第4页浏览型号HT6116-70的Datasheet PDF文件第5页浏览型号HT6116-70的Datasheet PDF文件第6页浏览型号HT6116-70的Datasheet PDF文件第8页浏览型号HT6116-70的Datasheet PDF文件第9页浏览型号HT6116-70的Datasheet PDF文件第10页  
HT6116-70
Write cycle 1
(1)
Write cycle 2
(1, 6)
Notes:
(1) WE must be high during all address transitions.
(2) A write occurs during the overlap (t
WP
) of a low CS and a low WE.
(3) t
WR
is measured from the earlier of CS or WE going high to the end of the write cycle.
(4) During this period, I/O pins are in the output state, so the input signals of the opposite
phase to the outputs must not be applied.
(5) If the CS low transition occurs simultaneously with the WE low transitions or after
the WE transition, outputs remain in a high impedance state.
7
3rd July ’97