HT7612/HT7612B
R8
680K
D
S
R1
56K
C3
R2
2
OP1N
15
14
ZC
R7
1M
3
OP1O
BUZ/LVD
C6
0.02uF
22K
R3
22K
4
OP2N
R5
1M
C7
0.02uF
5
OP2O
MODE
12
22uF
C2
22uF
G
PIR
C1
0.02uF
Photo-transistor
OP1P
TEST/SC
1
16
R10
1M
D1
D4
C12
2.2uF
R9
1M
W1
D2
D3
Buzzer
Jumper
1N5819
L1 10uH
1
2
3
SW
GND
13
FB
Rfb
10
HT7939
VIN
OVP
EN
6
5
4
Rsh
100K
C11
22uF
GND
BUZB/CDS
6
Vref
R6
1M
C4
1uF
C8
3nF
8
VSS
7
TD
RELAY/LED
11
TRIAC
10
VCC
VDD
9
1
HT7612/HT7612B
ON
AUTO
3
OFF
2
C10
0.1uF
C9
100uF
4.5V
Battery
Photo-transistor Application Circuit
GND
Rev. 1.50
Note:
13
GND
Adjust R9 to fit various CDS.
Adjust R6 to obtain the desired output duration.
Adjust R5 to change PIR sensitivity.
Use a Photo-transistor instead of a CDS to meet European RoHS standards.
February 21, 2011
HOLTEK [ HOLTEK SEMICONDUCTOR INC ]
