HTMOS
TM
High Temperature Products
HIGH TEMPERATURE 32K x 8 STATIC RAM
FEATURES
• Specified Over -55 to +225°C
• Fabricated with HTMOS™ IV Silicon on Insulator (SOI)
• Read/Write Cycle Times
≤
50 ns Support 20 MHz Clock
• Asynchronous Operation
• CMOS Input/Output Buffers
• Single 5 V
±
10% Power Supply
• Hermetic 28-Lead Ceramic DIP
HT6256
APPLICATONS
• Down-Hole Oil Well
• Avionics
• Turbine Engine Control
• Industrial Process Control
• Nuclear Reactor
• Electric Power Conversion
• Heavy Duty Internal Combustion Engines
GENERAL DESCRIPTION
The 32K x 8 High Temperature Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabri-
cated with Honeywell’s HTMOS™ technology, and is
designed for use in systems operating in severe high
temperature environments.
The RAM requires only a single 5 V
±
10% power supply
and has CMOS compatible I/O. Power consumption is
typically less than 30 mW/MHz in operation, and less than
10 mW when de-selected. The RAM read operation is fully
asynchronous, with an associated typical access time of
50 ns at 5 V.
The RAM provides guaranteed performance over the full
-55 to +225°C temperature range. Typically, parts will
operate up to +300°C for a year, with derated perfor-
mance. All parts are burned in at 250°C to eliminate infant
mortality.
PACKAGE PINOUT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Top
View
VDD
NWE
A13
A8
A9
A11
NOE
A10
NCS
DQ7
DQ6
DQ5
DQ4
DQ3
Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com
HONEYWELL [ HONEYWELL SOLID STATE ELECTRONICS CENTER ]
