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SE5455 参数 Datasheet PDF下载

SE5455图片预览
型号: SE5455
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓红外发光二极管 [GaAs Infrared Emitting Diode]
分类和应用: 二极管
文件页数/大小: 4 页 / 83 K
品牌: HONEYWELL [ HONEYWELL SOLID STATE ELECTRONICS CENTER ]
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SE3455/5455
GaAs Infrared Emitting Diode
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90° or 20° (nominal) beam angle option
935 nm wavelength
Wide operating temperature range
(-55°C to +125°C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode, SD3443/5443/5491
phototransistor, SD3410/5410 photodarlington and
SD5600 series Schmitt trigger
INFRA-83.TIF
DESCRIPTION
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
SE3455
.188 (4.77)
DIA.
.178 (4.52)
.219 (5.56)
DIA.
.208 (5.28)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
NOM
1
2
.048(1.22)
.160 (4.06)
DIA.
.137 (3.48)
.015
(0.36)
.153 (3.89)
.140 (3.56)
.028(.71)
.018
DIA.
(.460)
INFRA--5.DIM
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
SE5455
.188 (4.77)
DIA.
.178 (4.52)
.219 (5.56)
DIA.
.208 (5.28)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
NOM
1
2
.160 (4.06)
DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
.015
(0.36)
.200
5.08
.048(1.22)
.028(.71)
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
26
© Honeywell Europe S.A.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.