SEP8506
GaAs Infrared Emitting Diode
FEATURES
•
Side-emitting plastic package
•
50¡ (nominal) beam angle
•
935 nm wavelength
•
Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
INFRA-20.TIF
DESCRIPTION
The SEP8506 is a gallium arsenide infrared emitting
diode molded in a side-emitting red plastic package.
The chip is positioned to emit radiation through a plastic
lens from the side of the package.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
DIM_071.ds4
40
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
HONEYWELL [ HONEYWELL SOLID STATE ELECTRONICS CENTER ]
