RFM12B
Datasheet REV1.2
I
in
ESD
T
st
T
ld
Input current except power
Human body model
Storage temperature
Soldering temperature(10s)
-55
-25
25
1000
125
260
mA
V
℃
℃
Recommended working range
symbol
V
dd
T
op
parameter
Positive power supply
Working temperature
minimum
2.2
-40
maximum
3.8
85
Unit
V
℃
DC characteristic
symbol
I
dd_TX_0
parameter
Supply current
(TX mode, P
out
= 0dBm)
Remark
315,433MHz band
868MHz band
915MHz band
I
dd_TX_PMAX
Supply current
(TX mode, P
out
= P
max
)
315,433MHz band
868MHz band
915MHz band
I
dd_RX
Supply current
(RX mode)
315,433MHz band
868MHz band
915MHz band
I
x
I
pd
I
lb
V
lb
Idle current
Sleep mode current
Low battery detection
Low battery detect
threshold
V
lba
Low battery detection
accuracy
V
il
V
ih
I
il
I
ih
V
ol
V
oh
Low level input
High level input
Leakage current
Leakage current
Low level output
High level output
V
il
=0V
V
ih
=V
dd
, V
dd
=5.4V
I
ol
=2mA
I
oh
=-2mA
V
dd
-0.4
0.7*V
dd
-1
-1
1
1
0.4
0.3*V
dd
V
V
uA
uA
V
V
0
5
%
0.1V per step
2.2
Crystal oscillator on
All blocks off
minimum
typical
15
16
17
22
23
24
11
12
13
0.62
0.3
0.5
3.7
maximum
17
18
19
24
25
26
13
14
15
1.2
mA
uA
uA
V
mA
mA
Unit
mA
AC characteristic
symbol
f
ref
parameter
PLL frequency
frequency
f
LO
(10MHz crystal
used)
433 MHz band,2.5KHz step
868 MHz band,5KHz step
915 MHz band,7.5KHz step
remark
min
9
430.24
860.48
900.72
typical
10
max
11
439.7
5
879.5
1
929.2
7
Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: sales@hoperf.com
http://www.hoperf.com
MHz
Unit
MHz
HOPERF [ Hope Microelectronics co., Ltd ]
