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ATF-541M4-TR1 参数 Datasheet PDF下载

ATF-541M4-TR1图片预览
型号: ATF-541M4-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声增强模式伪HEMT的微型无铅封装 [Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package]
分类和应用: 晶体晶体管放大器
文件页数/大小: 16 页 / 166 K
品牌: HP [ AGILENT(HEWLETT-PACKARD) ]
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ATF-541M4 Typical Performance Curves
0.60
0.26
0.24
0.55
0.22
Fmin (dB)
dB/dBm
40
35
30
25
20
15
10
Gain
OIP3
P1dB
Fmin (dB)
0.50
0.20
0.18
0.16
0.14
0.12
0.45
0.40
0.35
0
20
40
60
80
100
I
ds
(mA)
0.10
0
20
40
60
80
100
0
20
40
60
80
100
I
ds
(mA)
I
ds
(mA)
Figure 6. Fmin vs. I
ds
at 2 GHz, V
ds
= 3V
[1]
Figure 7. Fmin vs. I
ds
at 900 MHz, V
ds
= 3V
[1]
Figure 8. Gain, OIP3 & P1dB vs. I
ds
Tuned
for Max OIP3 and Min NF at 2 GHz,
V
ds
= 3V
[2]
.
30
40 mA
60 mA
80 mA
40
Gain
OIP3
P1dB
2.5
35
2.0
25
dB/dBm
25
1.0
80 mA
60 mA
40 mA
Ga (dB)
30
Fmin (dB)
1.5
20
15
20
0.5
10
15
0
20
40
60
80
100
I
ds
(mA)
0
0
2
4
6
8
10
12
FREQUENCY (GHz)
5
0
2
4
6
8
10
12
FREQUENCY (GHz)
Figure 9. Gain, OIP3 & P1dB vs. I
ds
Tuned
for Max OIP3 and Min NF at 900 MHz,
V
ds
= 3V
[3]
.
Figure 10. Fmin vs. Frequency vs. I
ds
,
V
ds
= 3V
[1]
.
Figure 11. Ga vs. Frequency vs. I
ds
,
V
ds
= 3V
[1]
.
Notes:
1. Fmin and associated gain at minimum noise
figure (Ga) values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements a true
Fmin and Ga is calculated. Refer to the noise
parameter application section for more
information.
2. Measurements obtained using production
test board described in Figure 5.
3. Input tuned for minimum NF and the output
tuned for maximum OIP3 using an
InterContinental Microwave (ICM) test
fixture, double stub tuners and bias tees.
4