H
2 – 26.5 Medium Power Amplifier
Technical Data
HMMC-5027
Features
• Wide-Frequency Range:
2-26.5 GHz
• Moderate Gain:
7 dB
• Gain Flatness:
1 dB
• Return Loss:
Input
-13 dB
Output -11 dB
• Low-Frequency Operation
Capability:
< 2 GHz
• Gain Control:
30 dB Dynamic Range
• Medium Power:
20 GHz:
P
-1dB
: 22 dBm
P
sat
: 24 dBm
26.5 GHz: P
-1dB
: 19 dBm
P
sat
: 21 dBm
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980 x 770
µm
(117.3 x 30.3 mils)
±
10
µm
(± 0.4 mils)
127
±
15
µm
(5.0
±
0.6 mils)
75 x 75
µm
(2.95 x 2.95 mils), or larger
Absolute Maximum Ratings
[1]
Symbol
V
DD
I
DD
V
G1
I
G1
V
G2
I
G2
P
DC
P
in
T
ch
T
case
T
STG
T
max
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
First Gate Voltage
First Gate Current
Second Gate Voltage
Second Gate Current
DC Power Dissipation
CW Input Power
Operating Channel Temp.
Operating Case Temp.
Storage Temperature
Maximum Assembly Temp.
(for 60 seconds maximum)
Units
V
mA
V
mA
V
mA
watts
dBm
°C
°C
°C
°C
-55
-65
+165
+300
-5
-1
-2.5
-25
2.4
23
+150
Min.
Max.
8.0
300
0
+
1
+
5
Description
The HMMC-5027 is a broadband
GaAs MMIC Traveling Wave
Amplifier designed for medium
output power and moderate gain
over the full 2 to 26.5 GHz
frequency range. Seven MESFET
cascode stages provide a flat gain
response, making the HMMC-5027
an ideal wideband power block.
Optical lithography is used to
produce gate lengths of
≈
0.5 mm.
The HMMC-5027 incorporates
advanced MBE technology,
Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25°C except for T
ch
, T
STG
, and T
max
.
6-47
5965-5447E
HP [ AGILENT(HEWLETT-PACKARD) ]
