1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
BLUE
CYAN
EMERALD GREEN
YELLOW GREEN
GREEN
AMBER
ORANGE
RED ORANGE
RED
0.2
0.1
0
380
430
480
530
580
630
680
730
780
WAVELENGTH – nm
35
30
25
20
15
10
1.0
0.8
0.6
0.4
0.2
0
GaP
EMERALD
GREEN
HSMS/D/Y/G
HSMZ/V/U
GaP
YELLOW
GREEN
GaP YELLOW
GaP ORANGE
GaP RED
HSMH
GaN BLUE
HSMC/J/L/A/E
HSMM/K/N
HSMB
5
0
0
1
2
3
4
5
380
430
480
530
580
630
680
730
780
FORWARD VOLTAGE – V
WAVELENGTH – nm
Figure 1. Relative intensity vs. wavelength.
Figure 2. Forward current vs. forward voltage.
1.8
35
30
25
20
15
10
540
530
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Gap
AlInGaP
AlGaAs
HSMS/D/G/
Y/U/V/Z
GREEN
HSMH
520
InGaN
GaN
HSMC/J/L/A/E
HSMM/K/B/N
510
CYAN
BLUE
500
490
480
470
460
5
0
0
5
10 15 20 25 30 35
0
5
10 15 20 25 30 35
0
20
40
60
80
100 120
DC FORWARD CURRENT – mA
CURRENT – mA
TEMPERATURE – °C
Figure 3. Relative intensity vs. forward
current.
Figure 5. Dominant wavelength vs. forward
current – InGaN devices.
Figure 4. Maximum forward current vs.
ambient temperature. Derated based on
T MAX = 110˚C, Rθ = 500˚C/W.
J
JA
8
HP [ HEWLETT-PACKARD ]
