3
Absolute Maximum Ratings, T
C
= +25
°
C, Single Diode
Symbol
P
IV
T
J
T
STG
T
OP
θ
jc
Parameter
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Operating Temperature
Thermal Resistance
[2]
Unit
V
°C
°C
°C
°C/W
Absolute Maximum
[1]
SOT-23/143 SOT-323/363
2.0
150
-65 to 150
-65 to 150
500
2.0
150
-65 to 150
-65 to 150
150
ESD WARNING:
Handling Precautions
Should Be Taken To Avoid
Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package
pins where contact is made to the circuit board.
Equivalent Linear Circuit Model
HSMS-285x chip
R
j
R
S
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
Units
V
pF
eV
A
A
Ω
V
HSMS-285x
3.8
0.18
0.69
3 E -4
3 E-6
1.06
25
0.35
2
0.5
C
j
N
R
S
P
B
(V
J
)
P
T
(XTI)
M
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
8.33 X 10
-5
nT
R
j
=
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
HP [ AGILENT(HEWLETT-PACKARD) ]
