HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6512-B
Issued Date : 1992.11.25
Revised Date : 2000.09.15
Page No. : 1/3
HSA1015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSA1015 is designed for use in driver stage of AF amplifier and
general purpose amplification.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -50 V
VCEO Collector to Emitter Voltage .................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -150 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-50
-50
-5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-300
-1.1
700
-
-
7
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE1
Rank
Range
Y
120-240
GR
200-400
BL
350-700
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
